Download the NP82N04NDG datasheet PDF.
This datasheet also covers the NP82N04MDG variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.
General Description
The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
Key Features
Logic level.
Super low on-state resistance
RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A).
Full PDF Text Transcription for NP82N04NDG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NP82N04NDG. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MDG, NP82N04NDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect T...
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RIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MDG-S18-AY Note NP82N04NDG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP.
NP82N04NDG Datasheet
