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NP82N055KHE - MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the NP82N055KHE, a member of the NP82N055CHE MOS FIELD EFFECT TRANSISTOR family.

Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A).
  • Low Ciss: Ciss = 3500 pF TYP.
  • Built-in gate protection diode 5 NP82N055KHE (TO-220AB).

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Datasheet Details

Part number NP82N055KHE
Manufacturer NEC
File Size 104.08 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP82N055KHE Datasheet
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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP.
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