Download the NP82N055EHE datasheet PDF.
This datasheet also covers the NP82N055CHE variant, as both devices belong to the same mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
Channel temperature 175 degree rated.
Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A).
Full PDF Text Transcription for NP82N055EHE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NP82N055EHE. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products ar...
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055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP.
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NP82N055EHE Datasheet
