NP82N055EHE Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
NP82N055EHE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)
- Low Ciss: Ciss = 3500 pF TYP
- Built-in gate protection diode 5