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NP82N055CHE - MOS FIELD EFFECT TRANSISTOR

General Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A).
  • Low Ciss: Ciss = 3500 pF TYP.
  • Built-in gate protection diode 5 NP82N055KHE (TO-220AB).

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Full PDF Text Transcription for NP82N055CHE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP82N055CHE. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products ar...

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055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP.

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