NP82N06PDG Key Features
- Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41
- Low Ciss Ciss = 5700 pF TYP
- Part: NP82N06PDG
- Description: N-CHANNEL POWER MOS FET
- Manufacturer: Renesas
- Size: 181.64 KB
Other NP82N06PDG Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
NP82N06PLG | SWITCHING N-CHANNEL POWER MOS FET |