• Part: NP82N06PDG
  • Description: N-CHANNEL POWER MOS FET
  • Manufacturer: Renesas
  • Size: 181.64 KB
NP82N06PDG Datasheet (PDF) Download
Renesas
NP82N06PDG

Overview

The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
  • Low Ciss Ciss = 5700 pF TYP.
NP82N06PDG datasheet preview

Datasheets by Manufacturer