Full PDF Text Transcription for NP82N06PDG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NP82N06PDG. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high ...
View more extracted text
NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note LEAD PLATING Pure Sn (Tin) Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A) • Low Ciss Ciss = 5700 pF TYP.
NP82N06PDG Datasheet
