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NP90N03VLG - MOS FIELD EFFECT TRANSISTOR

Description

The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Designed for automotive.

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Datasheet Details

Part number NP90N03VLG
Manufacturer Renesas
File Size 225.06 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP90N03VLG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP90N03VLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP90N03VLG-E1-AY∗1 NP90N03VLG-E2-AY∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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