NP90N03VLG MOS FIELD EFFECT TRANSISTOR

Renesas

Description

NP90N03VLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 .
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance ⎯.

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Datasheet Specifications

Part number: NP90N03VLG
Manufacturer: Renesas ↗
File Size: 225.06 KB
Datasheet: NP90N03VLG-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
* Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)

NP90N03VLG Distributors

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NP90N03VLG MOS FIELD EFFECT TRANSISTOR Renesas

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