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NP90N03VLG Datasheet

MOS FIELD EFFECT TRANSISTOR

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NP90N03VLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0129EJ0100
Rev.1.00
Sep 24, 2010
Description
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
Low input capacitance
Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP90N03VLG-E1-AY1
NP90N03VLG-E2-AY1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-252, Taping (E1 type)
TO-252, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C) PT1
Total Power Dissipation (TA = 25°C) PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current 2
Repetitive Avalanche Energy 2
Tstg
IAR
EAR
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Tch(peak) 150°C, RG = 25 Ω
Ratings
30
±20
±90
±360
105
1.2
175
55 to +175
41
168
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6


Renesas Electronics Components Datasheet

NP90N03VLG Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

NP90N03VLG
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
1.4
30
Typ
1.8
67
2.5
3.8
5000
600
420
17
13
73
9
90
13
26
0.9
42
35
Max
1
±10
2.5
3.2
8.0
7500
900
760
34
33
146
23
135
1.5
Chapter Title
Unit
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VGS = 4.5 V, ID = 35 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 45 A,
VGS = 10 V,
RG = 0 Ω
VDD = 24 V,
VGS = 10 V,
ID = 90 A
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 2 of 6


Part Number NP90N03VLG
Description MOS FIELD EFFECT TRANSISTOR
Maker Renesas
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