NP90N03VLG transistor equivalent, mos field effect transistor.
* Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
* Low input capacitance ⎯ Ciss = 5000.
Features
* Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS =.
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