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PS2561FL-1 - DIP PHOTOCOUPLER

Download the PS2561FL-1 datasheet PDF. This datasheet also covers the PS2561F-1 variant, as both devices belong to the same dip photocoupler family and are provided as variant models within a single manufacturer datasheet.

Description

The PS2561F-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561F-1 is in a plastic DIP (Dual In-line Package) and the PS2561FL-1 is lead bending type (Gull-wing) for surface mount.

Features

  • Operating ambient temperature: 110°C.
  • High Isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 450% TYP. ).
  • High-speed switching (tr = 5 μs TYP. , tf = 7 μs TYP. ).
  • Embossed tape product: PS2561FL-1-F3 : 2 000 pcs/reel.
  • Pb-Free product.
  • Safety standard.
  • UL approved: No. E72422.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PS2561F-1-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
PS2561-1 Photocoupler Kexin
PS2561-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEC
PS2561-1 PHOTOCOUPLER CEL
PS2561-2 Photocoupler Kexin
PS2561-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEC

Other Datasheets by Renesas

Part Number Description
PS2561F-1 DIP PHOTOCOUPLER
PS2561-1 GaAs light emitting diode and an NPN silicon phototransistor
PS2561D-1 DIP PHOTOCOUPLER
PS2561DL-1 DIP PHOTOCOUPLER
PS2561DL1-1 DIP PHOTOCOUPLER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Data Sheet PS2561F-1,PS2561FL-1 DIP PHOTOCOUPLER, OPERATING AMBIENT TEMPERATURE 110°C R08DS0033EJ0100 Rev.1.00 Jan 06, 2012 DESCRIPTION The PS2561F-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561F-1 is in a plastic DIP (Dual In-line Package) and the PS2561FL-1 is lead bending type (Gull-wing) for surface mount. FEATURES • Operating ambient temperature: 110°C • High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 450% TYP.) • High-speed switching (tr = 5 μs TYP., tf = 7 μs TYP.) • Embossed tape product: PS2561FL-1-F3 : 2 000 pcs/reel • Pb-Free product • Safety standard • UL approved: No.
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