• Part: PS2561-1
  • Description: GaAs light emitting diode and an NPN silicon phototransistor
  • Manufacturer: Renesas
  • Size: 5.11 MB
Download PS2561-1 Datasheet PDF
PS2561-1 page 2
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PS2561-1 page 3
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Datasheet Summary

PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE Data Sheet R08DS0207EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTION The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount. The PS2561L1-1 is wide lead bending type. The PS2561L2-1 is wide lead bending type for surface mount. Features - High isolation voltage (BV = 5 000 Vr.m.s.) - High collector to emitter voltage (VCEO = 80 V) - High current transfer ratio (CTR = 200% TYP.) - High-speed switching (tr = 3 s TYP., tf...