R1LP0408CSP-5SI Datasheet - Renesas

4M SRAM

R1LP0408CSP-5SI Features

* Single 5 V supply: 5 V ± 10%

* Access time: 55/70 ns (max)

* Power dissipation:  Active: 10 mW/MHz (typ)  Standby: 4 µW (typ)

* Completely static memory.  No clock or timing strobe required

* Equal access and cycle times

* Common data input and ou

R1LP0408CSP-5SI General Description

The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation; therefo.

R1LP0408CSP-5SI Datasheet (84.86 KB)