R1LP0408CSP-7LI Datasheet PDF (4M SRAM) | Download Renesas R1LP0408CSP-7LI

R1LP0408CSP-7LI - 4M SRAM

This page provides the datasheet information for the R1LP0408CSP-7LI, a member of the R1LP0408CSP-5SI 4M SRAM family.

Description

The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit.

R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

Single 5 V supply: 5 V ± 10%.
Access time: 55/70 ns (max).
Power dissipation:  Active: 10 mW/MHz (typ)  Standby: 4 µW (typ).
Completely static memory.  No clock or timing strobe required.
Equal access and cycle times.
Common data input and output.  Three state output.
Directly TTL compatible.  All inputs and outputs.
Battery backup operation.
Operating temperature:.
40 to +85°C Rev.2.00, May.26.2004,.

Datasheet Details

Part number	R1LP0408CSP-7LI
Manufacturer	Renesas
File Size	84.86 KB
Description	4M SRAM
Datasheet	R1LP0408CSP-7LI Datasheet
Additional preview pages of the R1LP0408CSP-7LI datasheet.

📁 Similar Datasheet

R1LP0108E - 1Mb Advanced LPSRAM (128k word x 8bit) (Renesas Technology)

R1LV0108E - 1Mb Advanced LPSRAM (128k word x 8bit) (Renesas Technology)

R1LV0416C-I - Wide Temperature Range Version 4M SRAM (Renesas Technology)

R1LV0416C-I - 4M SRAM (Renesas Technology)

R1LV0416CBG-I - Wide Temperature Range Version 4M SRAM (Renesas Technology)

R1LV0416CSB-5SI - 4M SRAM (Renesas Technology)

R1LV0416CSB-7LI - 4M SRAM (Renesas Technology)

R1LV1616H-I - Wide Temperature Range Version 16M SRAM (Renesas Technology)

R1LV1616HSA-4SI - Wide Temperature Range Version 16M SRAM (Renesas Technology)

R1LV1616HSA-5SI - Wide Temperature Range Version 16M SRAM (Renesas Technology)

Full PDF Text Transcription

Click to expand full text

R1LP0408C-I Series Wide Temperature Range Version 4M SRAM (512-kword × 8-bit) REJ03C0067-0200Z Rev. 2.00 May.26.2004 Description The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II. Features • Single 5 V supply: 5 V ± 10% • Access time: 55/70 ns (max) • Power dissipation:  Active: 10 mW/MHz (typ)  Standby: 4 µW (typ) • Completely static memory.  No clock or timing strobe required • Equal access and cycle times • Common data input and output.

Published: Sep 13, 2018 |