R1Q2A7236ABB Datasheet | Renesas

Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the R1Q2A7209 is a 8,388,608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. Features Power Supply - 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) Clock - Fast clock cycle time for high bandwidth - Two input clocks (K and /K) for precise DDR timing at clock rising edges only - Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches - Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems - Clock-stop capability with s restart I/O - Separate independent read and write data ports with concurrent transactions - 100% bus utilization DDR read and write operation - HSTL I/O - User programmable output impedance - DLL/PLL circuitry for wide output data valid window and future frequency scaling Function - Two-tick burst for low DDR transaction size - Internally self-timed write control - Simple control logic for easy depth expansion - JTAG 1149.1 patible test access port Package - 165 FBGA package (13 x 15 x 1.4 mm) - Ro HS pliance Level = 6/6 R10DS0164EJ0203 Rev. 2.03 Feb 01, 2019 Page 1 of 35 R1Q2A7236ABB, R1Q2A7218ABB, R1Q2A7209ABB Part Number Definition Column No. 0 1 2 3 4 5 6 7 8 9 10 11 - 12 13 14 15 16 Example R1Q2A7218A B B - 4 0 I B 1 The above part number is just example for 72M QDRII B2 x18 250MHz, 13x15mm PKG, Pb-free part. No. - ments No. - ments 0-1 R1 Renesas Memory...