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R1QGA4418RBG - SRAM

Download the R1QGA4418RBG datasheet PDF. This datasheet also covers the R1QGA4436RBG variant, as both devices belong to the same sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

Key Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
  • Clock z Fast clock cycle time for high bandwidth z Two input clocks (K and /K) for precise DDR timing at clock rising edges only z Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems z Clock-stop capability with μs restart.
  • I/O z Separate independent read and write data ports with concurrent transactions z 100% bus utilization DDR read and write operation z HSTL I/O z User pr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1QGA4436RBG-Renesas.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Renesas

Part Number Description
R1QGA4436RBG SRAM
R1Q2A7209ABB 72-Mbit QDRII SRAM
R1Q2A7218ABB 72-Mbit QDRII SRAM
R1Q2A7236ABB 72-Mbit QDRII SRAM
R1Q3A7218ABB 72-Mbit SRAM
R1Q3A7236ABB 72-Mbit SRAM
R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM
R1Q6A7236ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM
R1QBA3618CBG 36-Mbit DDRII+ SRAM
R1QBA3636CBG 36-Mbit DDRII+ SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.0 Cycle Read latency) R10DS0139EJ0201 Rev.2.01 Aug 01, 2014 Description The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.