R1QLA4418RBG
Description
The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
Key Features
- Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
- Two-tick burst for low DDR transaction size
- Internally self-timed write control
- Simple control logic for easy depth expansion
