R1QLA4418RBG Datasheet | Renesas

R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR™II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency) with ODT R10DS0144EJ0200 Rev.2.00 Aug 01, 2014 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage,...