• Part: R1RP0404DGE-2LR
  • Description: 4M High Speed SRAM
  • Manufacturer: Renesas
  • Size: 168.59 KB
R1RP0404DGE-2LR Datasheet (PDF) Download
Renesas
R1RP0404DGE-2LR

Description

The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

Key Features

  • Single 5.0 V supply: 5.0 V ± 10%
  • Access time 12 ns (max)
  • pletely static memory  No clock or timing strobe required
  • Equal access and cycle times
  • Operating current: 130 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version)
  • Data retention current: 0.5 mA (max) (L-version)
  • Data retention voltage: 2.0 V (min) (L-version)
  • Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RP0404D Series