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R1RP0404DGE-2LR

The R1RP0404DGE-2LR is 4M High Speed SRAM designed by Renesas.

Product Overview

Renesas

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R1RP0404DGE-2LR 4M High Speed SRAM by Renesas - Datasheet Preview — Datasheet preview – R1RP0404DGE-2LR

Datasheet Details

Part number	R1RP0404DGE-2LR, R1RP0404D
Manufacturer	Renesas
File Size	168.59 KB
Description	4M High Speed SRAM
Datasheet	R1RP0404D-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1RP0404DGE-2LR, R1RP0404D. Please refer to the document for exact specifications by model.
Additional preview pages of the R1RP0404DGE-2LR datasheet.

Product details

Description

The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

Features

Single 5.0 V supply: 5.0 V ± 10%.
Access time 12 ns (max).
Completely static memory  No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible  All inputs and outputs.
Operating current: 130 mA (max).
TTL standby current: 40 mA (max).
CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version).
Data retention current: 0.5 mA (max) (L-version).
Data retention voltage: 2.0.

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Published: Oct 10, 2014 |