R1RP0404DGE-2LR Datasheet | Renesas

R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features - Single 5.0 V supply: 5.0 V ± 10% - Access time 12 ns (max) - pletely static memory  No clock or timing strobe required - Equal access and cycle...