R1RP0404DGE-2PR
Overview
The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
- Single 5.0 V supply: 5.0 V ± 10%
- Access time 12 ns (max)
- Completely static memory No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible All inputs and outputs
- Operating current: 130 mA (max)
- TTL standby current: 40 mA (max)
- CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version)
- Data retention current: 0.5 mA (max) (L-version)
- Data retention voltage: 2.0 V (min) (L-version)
