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R1RP0404DGE-2LR - 4M High Speed SRAM

This page provides the datasheet information for the R1RP0404DGE-2LR, a member of the R1RP0404D 4M High Speed SRAM family.

Datasheet Summary

Description

The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0 V supply: 5.0 V ± 10%.
  • Access time 12 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 130 mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version).
  • Data retention current: 0.5 mA (max) (L-version).
  • Data retention voltage: 2.0.

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Datasheet Details

Part number R1RP0404DGE-2LR
Manufacturer Renesas
File Size 168.59 KB
Description 4M High Speed SRAM
Datasheet download datasheet R1RP0404DGE-2LR Datasheet
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R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply: 5.
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