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R1RP0408D - 4M High Speed SRAM

General Description

The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Key Features

  • Single 5.0V supply: 5.0V ± 10%.
  • Access time: 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 130mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max) : 1.0mA (max) (L-version).
  • Data retention current : 0.5mA (max) (L-version).
  • Data retention voltage : 2.0V (min.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0288EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 36-pin plastic SOJ. Features • Single 5.0V supply: 5.