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R1RP0408DGE-2LR - 4M High Speed SRAM

This page provides the datasheet information for the R1RP0408DGE-2LR, a member of the R1RP0408D 4M High Speed SRAM family.

Datasheet Summary

Description

The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0 V supply: 5.0 V ± 10%.
  • Access time: 10 ns / 12 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 140mA /130mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version).
  • Data retention current: 0.5 mA (max) (L-version).
  • Data retentio.

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Datasheet Details

Part number R1RP0408DGE-2LR
Manufacturer Renesas
File Size 405.49 KB
Description 4M High Speed SRAM
Datasheet download datasheet R1RP0408DGE-2LR Datasheet
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R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ. Features • Single 5.0 V supply: 5.
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