R1RP0408DGE-2PR
Overview
The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
- Single 5.0V supply: 5.0V ± 10%
- Access time: 12ns (max)
- Completely static memory ⎯ No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible ⎯ All inputs and outputs
- Operating current: 130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current : 5mA (max) : 1.0mA (max) (L-version)
- Data retention current : 0.5mA (max) (L-version)
- Data retention voltage : 2.0V (min) (L-version)
