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R2J20655BNP Key Features

  • Based on Intel 6  6 DrMOS Specification
  • Built-in power MOS FET suitable for Desktop, Server application
  • Low-side MOS FET with built-in SBD for lower loss and reduced ringing
  • Built-in driver circuit which matches the power MOS FET
  • Built-in tri-state input function which can support a number of PWM controllers
  • High-frequency operation (above 1 MHz) possible
  • VIN operating-voltage range: 27 Vmax
  • Large average

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R2J20655BNP Description

The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.