R2J20658BNP Datasheet | Renesas

Preliminary Datasheet Integrated Driver - MOS FET (Dr MOS) R07DS0550EJ0101 (Previous No.: R07DS0542EJ0100) Rev.1.01 Sep 30, 2011 Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Features - Based on Intel 6  6 Dr MOS Specification. - Built-in power MOS FET suitable for Desktop, Server application. - Low-side MOS FET with built-in SBD for lower loss and reduced ringing. - Built-in driver circuit which matches the power MOS FET - Built-in tri-state input function which can support a number of PWM controllers - High-frequency operation (above 1 MHz) possible - VIN operating-voltage range: 20 Vmax - Large average output current (Max.40 A) - Achieve low power dissipation - Controllable driver: Remote on/off - Support Mid-Voltage PWM signal to enter zero current detection - Double thermal protection: Thermal Warning & Thermal Shutdown - Built-in bootstrapping Switch - Small package: QFN40 (6 mm  6 mm  0.95 mm) - Pb-free/Halogen-free Outline THWN DISBL# LSDBL# Integrated Driver-MOS FET (Dr MOS) QFN40 package 6 mm × 6 mm VCIN Reg5V BOOT GH VIN Driver Pad High-side MOS Pad MOS FET...