Datasheet4U Logo Datasheet4U.com

R2J20655BNP - MOSFET

General Description

The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package.

The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters.

Key Features

  • Based on Intel 6  6 DrMOS Specification.
  • Built-in power MOS FET suitable for Desktop, Server.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
R2J20651ANP MOSFET Renesas Technology
R2J20651NP MOSFET Renesas Technology
R2J20652ANP MOSFET Renesas Technology
R2J20653ANP MOSFET Renesas Technology
R2J20602NP Integrated Driver Renesas Technology

Other Datasheets by Renesas

Part Number Description
R2J20654NP MOSFET
R2J20657CNP MOSFET
R2J20658BNP MOSFET
R2J20601NP Driver - MOSFET Integrated SiP
R2J25953SP H-Bridge Control High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet R2J20655BNP Integrated Driver - MOS FET (DrMOS) R07DS0548EJ0101 (Previous No.: R07DS0540EJ0100) Rev.1.01 Sep 30, 2011 Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Features  Based on Intel 6  6 DrMOS Specification.  Built-in power MOS FET suitable for Desktop, Server application.  Low-side MOS FET with built-in SBD for lower loss and reduced ringing.