R2J20655BNP Description
The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
R2J20655BNP Key Features
- Based on Intel 6 6 DrMOS Specification
- Built-in power MOS FET suitable for Desktop, Server application
- Low-side MOS FET with built-in SBD for lower loss and reduced ringing
- Built-in driver circuit which matches the power MOS FET
- Built-in tri-state input function which can support a number of PWM controllers
- High-frequency operation (above 1 MHz) possible
- VIN operating-voltage range: 27 Vmax
- Large average