Datasheet4U Logo Datasheet4U.com

RAJ2930004AGM Datasheet Gate Driver

Manufacturer: Renesas

Overview: Preliminary Short Datasheet Rev0.2 RAJ2930004AGM Preliminary Short Datasheet Gate Driver IC for IGBTs and SiC MOSFETs 1.

General Description

The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications.

Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side).

In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance over 150 V/ns, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems.

Key Features

  • On-chip Micro Isolator (isolated circuit).
  • High voltage isolation: 3750Vrms, 1min.
  • High CMTI (Common Mode Transient Immunity): over 150V/ns.
  • High output gate drive circuit.
  • Gate drive output peak current (Source / Sink): 10A typ. / 10A typ.
  • On-chip active miller clamp.
  • Soft turn-off function.
  • Various on-chip protection circuits.
  • Over current detection by DESAT (Desaturation Protection): 8.9V typ.
  • On-chip under volta.

More Datasheets from Renesas

Part Number Description
RAJ20660AGNP Integrated Driver - MOS FET
RAJ240045 2 to 4 Series Li-ion Battery Manager
RAJ240047 Integrated Li-ION Battery Management
RAJ240071 2 to 5 Series Li-ion Battery Manager
RAJ240075 2 to 5 Series Li-ion Battery Manager
RAJ240080 Li-ion Battery Manager
RAJ240090 Li-ion Battery Manager
RAJ240100 Li-ion Battery Manager
RAJ2800024H12HPF Intelligent Power Device
RAJ2800044H12HPF Intelligent Power Device

RAJ2930004AGM Distributor