RBN200N180S2HFWA Datasheet - Renesas

IGBT

RBN200N180S2HFWA Features

* Renesas generation 8th Trench IGBT

* Short circuit withstands time (10 s min.)

* Optimized for high power application

* Unsawn wafer Wafer size = 200 mm

* Quality grade: Standard Outline Datasheet R07DS1453EJ0110 Rev.1.10 Apr 11th, 2023 wafer 1.Gate 2.Collector(The back) 3.E

RBN200N180S2HFWA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your .

RBN200N180S2HFWA Datasheet (311.74 KB)