Part number:
RBN75H65T1FPQ-A0
Manufacturer:
File Size:
164.29 KB
Description:
Igbt.
* Trench gate and thin wafer technology (G8H series)
* Built in fast recovery diode in one package
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)
* Quality grade: Standard
* High speed switching
* Non-specification f
RBN75H65T1FPQ-A0 Datasheet (164.29 KB)
RBN75H65T1FPQ-A0
164.29 KB
Igbt.
📁 Related Datasheet
RBN75H125S1FP4-A0 IGBT (Renesas)
RBN75N125S1UFWA IGBT (Renesas)
RBN75N65T1UFWA IGBT (Renesas)
RBN100N180S2HFWA IGBT (Renesas)
RBN150N180S2HFWA IGBT (Renesas)
RBN200N180S2HFWA IGBT (Renesas)
RBN25H125S1FPQ-A0 IGBT (Renesas)
RBN25N125S1UFWA IGBT (Renesas)
RBN40H125S1FPQ-A0 IGBT (Renesas)
RBN40H65T1FPQ-A0 IGBT (Renesas)