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RBN75N125S1UFWA Datasheet IGBT

Manufacturer: Renesas

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Overview

RBN75N125S1UFWA 1250V - 75A - IGBT.

Key Features

  • Renesas generation 8th Trench IGBT.
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C).
  • High speed switching.
  • Short circuit withstands time (10 s min. ).

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