Datasheet4U Logo Datasheet4U.com

RBN75H65T1FPQ-A0 - IGBT

Datasheet Summary

Features

  • Trench gate and thin wafer technology (G8H series).
  • Built in fast recovery diode in one package.
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C).
  • Quality grade: Standard.
  • High speed switching.
  • Non-specification for short circuit.

📥 Download Datasheet

Datasheet preview – RBN75H65T1FPQ-A0

Datasheet Details

Part number RBN75H65T1FPQ-A0
Manufacturer Renesas
File Size 164.29 KB
Description IGBT
Datasheet download datasheet RBN75H65T1FPQ-A0 Datasheet
Additional preview pages of the RBN75H65T1FPQ-A0 datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Datasheet RBN75H65T1FPQ-A0 650V - 75A - IGBT Power Switching R07DS1383EJ0120 Rev.1.20 Aug.03.2020 Features  Trench gate and thin wafer technology (G8H series)  Built in fast recovery diode in one package  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)  Quality grade: Standard  High speed switching  Non-specification for short circuit  Applications: UPS, Welding, photovoltaic inverters, Power converter system Key Performance Type RBN75H65T1FPQ-A0 VCES 650 V IC 75 A VCE(sat), TC=25°C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate G 2. Collector 3. Emitter 4. Collector E R07DS1383EJ0120 Rev.1.20 Aug.03.
Published: |