RBN75H65T1FPQ-A0 Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Datasheet RBN75H65T1FPQ-A0 650V - 75A - IGBT Power Switching R07DS1383EJ0120 Rev.1.20 Aug.03.

Trench gate and thin wafer technology (G8H series).
Built in fast recovery diode in one package.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C).
Quality grade: Standard.
High speed switching.
Non-specification for short circuit.