RJF0604DPD Datasheet | Renesas

Target Specifications Datasheet Silicon N Channel MOS FET Series Power Switching R07DS0713EJ0100 Rev.1.00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Latch type shut down operation (need 0 voltage recovery). - Built-in the current limitation circuit. - Power supply voltage applies 12 V and 24 V. - For Industrial applications Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 3 Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit 1. Gate 2. Drain 3. Source 4....