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RJF0604DPD - Silicon N-Channel FET

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • For Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Target Specifications Datasheet RJF0604DPD Silicon N Channel MOS FET Series Power Switching R07DS0713EJ0100 Rev.1.00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Logic level operation (4 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.  Power supply voltage applies 12 V and 24 V.