RJH60M6DPQ-A0 Description
Preliminary Datasheet RJH60M6DPQ-A0 600 V - 40 A - IGBT Application:.
RJH60M6DPQ-A0 Key Features
- Short circuit withstand time (8 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology