of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
the incorporation of these circuits, software, and information in the design of your equipment.
Full PDF Text Transcription for RJK0630JPE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RJK0630JPE. For precise diagrams, and layout, please refer to the original PDF.
RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 6.2 mΩ typ. • C...
View more extracted text
n • AEC-Q101 compliant • Low on-resistance : RDS(on) = 6.2 mΩ typ. • Capable of 4.5 V gate drive • Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4.
RJK0630JPE Datasheet
