Datasheet4U Logo Datasheet4U.com

RJK0631JPR - Silicon N-Channel MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • For Automotive.

📥 Download Datasheet

Datasheet preview – RJK0631JPR

Datasheet Details

Part number RJK0631JPR
Manufacturer Renesas Electronics
File Size 96.75 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet RJK0631JPR Datasheet
Additional preview pages of the RJK0631JPR datasheet.

📁 Similar Datasheet

  • RJK0601DPN-E0 - N-Channel MOSFET (Renesas Technology)
  • RJK0602DPN-E0 - N-Channel MOS FET (Renesas Technology)
  • RJK0603DPN-E0 - N-Channel MOSFET (Renesas Technology)
  • RJK0651DPB - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK0652DPB - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK0655DPB - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK0656DPB - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK0657DPA - N Channel Power MOS FET (Renesas Technology)
  • RJK0658DPA - N-Channel MOSFET (Renesas Technology)
  • RJK0659DPA - N-Channel MOSFET (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
RJK0631JPR 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 12 mΩ typ. • Capable of 4.5 V gate drive • Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) 2 D Preliminary Datasheet R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 1. Gate 1 G 2. Drain 3. Source 123 S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10μs duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4.
Published: |