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RJK0636JPD - Silicon N-Channel MOS FET

Description

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Features

  • For Automotive.

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Datasheet Details

Part number RJK0636JPD
Manufacturer Renesas Electronics
File Size 88.94 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet RJK0636JPD Datasheet
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Full PDF Text Transcription

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RJK0636JPD 60 V - 25 A - N Channel Power MOS FET High Speed Power Switching Preliminary Datasheet R07DS0365EJ0200 Rev.2.00 Aug 29, 2012 Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 18 m typ.  Capable of 4.5 V gate drive  Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 2, 4 D 123 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4.
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