RJK1054DPB Datasheet | Renesas

Preliminary Datasheet Silicon N Channel Power MOS FET Power Switching Features - - - - High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010 - Pb-free - Halogen-free - High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2...