RJK1051DPB Description
Preliminary Datasheet RJK1051DPB Silicon N Channel Power MOS FET Power Switching.
RJK1051DPB Key Features
- High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
- Low on-resistance RDS(on) = 30 m typ. (at VGS = 10 V)
- Pb-free
- Halogen-free
- Switching Mode Power Supply