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RJK1054DPB - N-Channel Power MOSFET

General Description

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Key Features

  • High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010.
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet RJK1054DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at L=10uH, Tch = 25C, Rg  50  3.