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RJK1052DPB - N-Channel Power MOSFET

General Description

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Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0083EJ0102 (Previous: REJ03G1769-0101) Rev.1.02 Jul 30, 2010.
  • Low on-resistance RDS(on) = 15 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet RJK1052DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0083EJ0102 (Previous: REJ03G1769-0101) Rev.1.02 Jul 30, 2010  Low on-resistance RDS(on) = 15 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Application  Switching Mode Power Supply www.DataSheet.co.