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Renesas Electronics Components Datasheet

RJK6006DPP-A0 Datasheet

Power MOSFET

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RJK6006DPP-A0
600V - 5A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Quality grade: Standard
Outline
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
D
12 3
G
S
Datasheet
R07DS1432EJ0100
Rev.1.00
Mar.10.2021
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID Notes4
5
A
Drain peak current
ID (pulse)Notes1
15
A
Body-drain diode reverse drain current
IDR
5
A
Body-drain diode reverse drain peak current
IDR (pulse) Notes1
15
A
Avalanche current
IAP Notes3
5
A
Avalanche energy
EAR Notes3
1.36
mJ
Channel dissipation
Pch Notes2
29
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Note:
Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of Semiconductor Devices) and individual reliability data .
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25 C
3. STch = 25 C, Tch 150 C
4. Limited by maximum safe operation area
R07DS1432EJ0100 Rev.1.00
Mar.10.2021
Page 1 of 6


Renesas Electronics Components Datasheet

RJK6006DPP-A0 Datasheet

Power MOSFET

No Preview Available !

RJK6006DPP-A0
Thermal Resistance Characteristics
Item
Symbol
Max. Value Notes5
Channel to case thermal impedance
ch-c
4.31
Notes: 5. Designed target value on Renesas measurement condition. (Not tested)
(Ta = 25 C)
Unit
CW
Electrical Characteristics
(Ta = 25 C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
V ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
1
A VDS = 600 V, VGS = 0
Gate to source leak current
IGSS
0.1 A VGS = 30 V, VDS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
3.0
4.5
V VDS = 10 V, ID = 1 mA
RDS(on)
1.4
1.6
 ID = 2.5 A, VGS = 10 V Notes6
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
600
pF VDS = 25 V
Coss
70
pF VGS = 0
Crss
10
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
25
ns ID = 2.5 A
tr
17
ns VGS = 10 V
td(off)
60
ns RL = 80
tf
10
ns Rg = 10
Total gate charge
Gate to source charge
Gate to drain charge
Qg
19
nC VDD = 480 V
Qgs
3.4
nC VGS = 10 V
Qgd
9.2
nC ID = 5 A
Body-drain diode forward voltage
VDF
0.9
1.5
V IF = 5 A, VGS = 0 Notes6
Body-drain diode reverse recovery time
trr
250
ns IF = 5 A, VGS = 0
diFdt = 100 As
Notes: 6. Pulse test
R07DS1432EJ0100 Rev.1.00
Mar.10.2021
Page 2 of 6


Part Number RJK6006DPP-A0
Description Power MOSFET
Maker Renesas
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RJK6006DPP-A0 Datasheet PDF






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