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RJK6006DPP-A0 - Power MOSFET

Features

  • Low on-resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching.
  • Quality grade: Standard Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK6006DPP-A0 600V - 5A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1432EJ0100 Rev.1.00 Mar.10.2021 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID Notes4 5 A Drain peak current ID (pulse)Notes1 15 A Body-drain diode reverse drain current IDR 5 A Body-drain diode reverse drain peak current IDR (pulse) Notes1 15 A Avalanche current IAP Notes3 5 A Avalanche energy EAR Notes3 1.
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