RJK6012DPE mosfet equivalent, n-channel power mosfet.
* Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching
R07DS0445EJ0300 (Previous: REJ03G.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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