RJK6012DPE Overview
Preliminary Datasheet RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching.
RJK6012DPE Key Features
- Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching
Datasheet Details
| Part number | RJK6012DPE |
|---|---|
| Datasheet | RJK6012DPE_Renesas.pdf |
| File Size | 141.99 KB |
| Manufacturer | Renesas |
| Description | N-Channel Power MOSFET |
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