RJP1CS08DWA Datasheet | Renesas

Preliminary Datasheet RJP1CS08DWT/RJP1CS08DWA 1250V - 200A - IGBT Application: Inverter Features - Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) - High speed switching - Short circuit withstands time (10 s min.) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter .DataSheet.net/...