RJP1CS08DWA
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
- High speed switching
- Short circuit withstands time (10 s min.) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012
Outline
Die: RJP1CS08DWT-80
2 C
Wafer: RJP1CS08DWA-80
3 1G 1 3 E 3
1. Gate 2. Collector (The back) 3. Emitter
.Data Sheet.net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 400 200 150 Unit V V A A C
Notes: 1. This data is a regulated value in Package (at Tc = 25C).
R07DS0831EJ0001 Rev.0.01 Jul 05, 2012
Page 1 of 3
Datasheet pdf
- http://..co.kr/
RJP1CS08DWT/RJP1CS08DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in package.)
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage...
