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RJP63F3 - N-Channel IGBT

Product Overview

Renesas

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RJP63F3 N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP63F3

Datasheet Details

Part number	RJP63F3
Manufacturer	Renesas
File Size	240.41 KB
Description	N-Channel IGBT
Datasheet	RJP63F3 Datasheet
Note	This datasheet PDF includes multiple part numbers: RJP63F3, RJP63F3DPP-M0. Please refer to the document for exact specifications by model.
Additional preview pages of the RJP63F3 datasheet.

Product details

Features

Trench gate and thin wafer technology (G6H series).
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
High speed switching tf = 100 ns typ.
Low leak current ICES = 1 μA max.
Isolated package TO-220FL Outline.

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Published: Jul 28, 2021 |