RJP63F3 - N-Channel IGBT

Renesas

Download the RJP63F3 datasheet PDF. This datasheet also covers the RJP63F3DPP-M0 variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

Trench gate and thin wafer technology (G6H series).
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
High speed switching tf = 100 ns typ.
Low leak current ICES = 1 μA max.
Isolated package TO-220FL Outline.

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RJP63F3 n-channel igbt by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (RJP63F3DPP-M0_Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	RJP63F3
Manufacturer	Renesas
File Size	240.41 KB
Description	N-Channel IGBT
Datasheet	RJP63F3 Datasheet

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Other Datasheets by Renesas

Part Number	Description
RJP63F3A	N-Channel IGBT
RJP63F3DPP-M0	N-Channel IGBT
RJP63K2DPK-M0	N-Channel IGBT
RJP63K2DPP-M0	N-Channel IGBT
RJP6065DPM	N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0321EJ0200 Rev.2.00 May 26, 2011 C 1 23 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C 1. Gate 2. Collector G 3. Emitter www.DataSheet.co.