RJP63F3A Description
RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching.
RJP63F3A Key Features
- Trench gate and thin wafer technology (G6H series)
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
- High speed switching tf = 100 ns typ
- Low leak current ICES = 1 μA max
- Isolated package TO-220FL