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RJP63F3A - N-Channel IGBT

Download the RJP63F3A datasheet PDF (RJP63F3DPP-M0 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel igbt.

Features

  • Trench gate and thin wafer technology (G6H series).
  • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
  • High speed switching tf = 100 ns typ.
  • Low leak current ICES = 1 μA max.
  • Isolated package TO-220FL Outline.

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Note: The manufacturer provides a single datasheet file (RJP63F3DPP-M0_Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0321EJ0200 Rev.2.00 May 26, 2011 C 1 23 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C 1. Gate 2. Collector G 3. Emitter www.DataSheet.co.
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