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RJP63F3DPP-M0 - N-Channel IGBT

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Renesas

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RJP63F3DPP-M0 N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP63F3DPP-M0

Datasheet Details

Part number	RJP63F3DPP-M0
Manufacturer	Renesas
File Size	240.41 KB
Description	N-Channel IGBT
Datasheet	RJP63F3DPP-M0 Datasheet
Additional preview pages of the RJP63F3DPP-M0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline.

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Published: May 2, 2012 |