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RJP63F3

Manufacturer: Renesas

This datasheet includes multiple variants, all published together in a single manufacturer document.

RJP63F3 datasheet preview

Datasheet Details

Part number	RJP63F3
Datasheet	RJP63F3 RJP63F3DPP-M0 Datasheet (PDF)
File Size	240.41 KB
Manufacturer	Renesas
Description	N-Channel IGBT

RJP63F3 Overview

RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching.

RJP63F3 Key Features

Trench gate and thin wafer technology (G6H series)
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
High speed switching tf = 100 ns typ
Low leak current ICES = 1 μA max
Isolated package TO-220FL

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