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RJP63F3 Datasheet N-Channel IGBT

Manufacturer: Renesas

Overview: RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching.

Download the RJP63F3 datasheet PDF. This datasheet also includes the RJP63F3DPP-M0 variant, as both parts are published together in a single manufacturer document.

Key Features

  • Trench gate and thin wafer technology (G6H series).
  • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
  • High speed switching tf = 100 ns typ.
  • Low leak current ICES = 1 μA max.
  • Isolated package TO-220FL Outline.