RJP63F3
RJP63F3 is N-Channel IGBT manufactured by Renesas.
- Part of the RJP63F3DPP-M0 comparator family.
- Part of the RJP63F3DPP-M0 comparator family.
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
- Trench gate and thin wafer technology (G6H series)
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
- High speed switching tf = 100 ns typ
- Low leak current ICES = 1 μA max
- Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
Preliminary Datasheet
R07DS0321EJ0200 Rev.2.00
May 26, 2011
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