UPA2201T1M Datasheet N-channel Mos Field Effect Transistor

Manufacturer: Renesas

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2201T1M N-CHANNEL MOS FET FOR.

Datasheet Details

Part number	UPA2201T1M
Manufacturer	Renesas
File Size	204.42 KB
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2201T1M-Renesas.pdf

General Description

The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

Key Features

Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A).
Built-in gate protection diode.
2.5 V Gate drive available.

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