UPA2201T1M Datasheet - Renesas

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)

* Built-in gate protection diode

* 2.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-

UPA2201T1M

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N-channel mos field effect transistor.

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UPA2201T1M N-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas

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