UPA2201T1M transistor equivalent, n-channel mos field effect transistor.
* Low on-state resistance
RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
* Built-in gate protection diode
* 2.
of portable equipments, such as load switch.
FEATURES
* Low on-state resistance
RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 .
The μ PA2201T1M is N-channel MOS Field Effect Transistor designed
for power management applications of portable equipments, such as load switch.
FEATURES
* Low on-state resistance
RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ .
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