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UPD5742T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

Description

electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

Features

  • Low Noise : NV =.
  • 98 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
  • 99 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
  • High Gain : GV = +9.0 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
  • Low Consumption Current : IDD = 370 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ.
  • Built-in the capacitor for RF noise immunity.
  • High ESD voltage.
  • 3-pin thin-type lead-less minimold.

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Datasheet preview – UPD5742T6J

Datasheet Details

Part number UPD5742T6J
Manufacturer Renesas Electronics
File Size 115.22 KB
Description LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet download datasheet UPD5742T6J Datasheet
Additional preview pages of the UPD5742T6J datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES • Low Noise : NV = −98 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +9.0 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 370 μA TYP. @ VDD = 2 V, RL = 2.
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