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uPD46184362B

Manufacturer: Renesas

uPD46184362B datasheet by Renesas.

This datasheet includes multiple variants, all published together in a single manufacturer document.

uPD46184362B datasheet preview

uPD46184362B Datasheet Details

Part number uPD46184362B
Datasheet uPD46184362B uPD46184182B Datasheet (PDF)
File Size 556.49 KB
Manufacturer Renesas
Description 18M-BIT DDR II SRAM 2-WORD BURST OPERATION
uPD46184362B page 2 uPD46184362B page 3

uPD46184362B Overview

The μPD46184182B is a 1,048,576-word by 18-bit and the μPD46184362B is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46184182B and μPD46184362B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive...

uPD46184362B Key Features

  • 1.8 ± 0.1 V power supply
  • 165-pin PLASTIC BGA (13 x 15)
  • HSTL interface
  • PLL circuitry for wide output data valid window and future frequency scaling
  • Pipelined double data rate operation
  • mon data input/output bus
  • Two-tick burst for low DDR transaction size
  • Two input clocks (K and K#) for precise DDR timing at clock rising edges only
  • Two output clocks (C and C#) for precise flight time
  • Internally self-timed write control
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uPD46184095B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
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uPD46184184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION
uPD46184185B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
uPD46185084B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION
uPD46185092B 18M-BIT QDR II SRAM 2-WORD BURST OPERATION
uPD46185094B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION
uPD46185182B 18M-BIT QDR II SRAM 2-WORD BURST OPERATION
uPD46185184B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION
uPD46185362B 18M-BIT QDR II SRAM 2-WORD BURST OPERATION

uPD46184362B Distributor

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