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Renesas Electronics Components Datasheet

2SC5850 Datasheet

Silicon NPN Epitaxial Type Transistor

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2SC5850
Silicon NPN Epitaxial
Features
Low frequency amplifier
REJ03G0760-0100
(Previous ADE-208-1479)
Rev.1.00
Aug.10.2005
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK R )
3
1. Emitter
2. Base
1 3. Collector
2
*CMPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Emitter current
IE
Collector power dissipation
PC*
Junction temperature
Tj
Storage temperature
Tstg
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Ratings
50
40
5
100
–100
150
150
–55 to +125
(Ta = 25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Rev.1.00 Aug 10, 2005 page 1 of 5


Renesas Electronics Components Datasheet

2SC5850 Datasheet

Silicon NPN Epitaxial Type Transistor

No Preview Available !

2SC5850
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
50
V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO
40
V IC = 1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
5

V IE = 10 µA, IC = 0
Collector cutoff current
ICBO   0.5 µA VCB = 30 V, IE = 0
Emitter cutoff current
DC current transfer ratio
IEBO
hFE*1
  0.5 µA VEB = 2 V, IC = 0
100 500
VCE = 12 V, IC = 2 mA
Collector to emitter saturation voltage
VCE(sat)
0.2
V IC = 10 mA, IB = 1 mA
Base to emitter voltage
VBE   0.75 V VCE = 12 V, IC = 2 mA
Notes: 1. The 2SC5850 is grouped by hFE as follows.
Grade
B
C
D
Mark
LB
LC
LD
hFE
100 to 200
160 to 320
250 to 500
Rev.1.00 Aug 10, 2005 page 2 of 5


Part Number 2SC5850
Description Silicon NPN Epitaxial Type Transistor
Maker Renesas Technology
Total Page 6 Pages
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