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BB506C - Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Key Features

  • Built in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz).
  • Low noise NF = 1.4 dB typ. (f = 900 MHz).
  • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz).
  • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline.

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Datasheet Details

Part number BB506C
Manufacturer Renesas
File Size 146.66 KB
Description Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet download datasheet BB506C Datasheet

Full PDF Text Transcription for BB506C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BB506C. For precise diagrams, and layout, please refer to the original PDF.

BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1246-0100 Rev.1.00 Jun. 27, 2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC bo...

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eatures • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “FS-“. 2. BB506C is individual type number of RENESAS BBFET.