• Part: BB506C
  • Description: Built in Biasing Circuit MOS FET IC UHF RF Amplifier
  • Manufacturer: Renesas
  • Size: 146.66 KB
Download BB506C Datasheet PDF
Renesas
BB506C
Features - Built in Biasing Circuit; To reduce using parts cost & PC board space. - High gain .. PG = 24 d B typ. (f = 900 MHz) - Low noise NF = 1.4 d B typ. (f = 900 MHz) - Low output capacitance Coss = 1.1 p F typ. (f = 1 MHz) - Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “FS-“. 2. BB506C is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Symbol VDS VG1S VG2S Ratings 6 +6 - 0 +6 - 0 30 250 150 - 55 to +150 Unit V V V m A m W °C °C Drain current ID Channel power dissipation Pch Note3 Channel temperature Tch Storage temperature Tstg Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm). Rev.1.00 Jun. 27, 2005, page 1 of 8 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown...