Part BB504C
Description Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Manufacturer Renesas
Size 251.72 KB
Renesas
BB504C

Overview

  • Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
  • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
  • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain Notes:
  • Marking is “DS-”.
  • BB504C is individual type number of RENESAS BBFET. Rev.6.00 Aug 10, 2005 page 1 of 9 BB504C