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BB504C - Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Product Overview

Renesas Technology

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BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier by Renesas Technology - Datasheet Preview — Datasheet preview – BB504C

Datasheet Details

Part number	BB504C
Manufacturer	Renesas Technology
File Size	251.72 KB
Description	Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Datasheet	BB504C Datasheet
Additional preview pages of the BB504C datasheet.

Product details

Features

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Low.
Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz.
High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz.
Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline.

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Published: Nov 19, 2008 |