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BB506M - Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Product Overview

Renesas Technology

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BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier by Renesas Technology - Datasheet Preview — Datasheet preview – BB506M

Datasheet Details

Part number	BB506M
Manufacturer	Renesas Technology
File Size	165.18 KB
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB506M Datasheet
Additional preview pages of the BB506M datasheet.

Product details

Features

Built in Biasing Circuit; To reduce using parts cost & PC board space.
High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz).
Low noise NF = 1.4 dB typ. (f = 900 MHz).
Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz).
Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline.

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Published: Nov 19, 2008 |