BB506M Description
BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007.
BB506M Key Features
- Built in Biasing Circuit; To reduce using parts cost & PC board space
- High gain .. PG = 24 dB typ. (f = 900 MHz)
- Low noise NF = 1.4 dB typ. (f = 900 MHz)
- Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz)
- Provide mini mold packages: CMPAK-4 (SOT-343mod)